收藏本站
AN814
Vishay Siliconix
SC-70 (6-PIN)
500
R q JA
P D + 150 C o * 25 C
R q JA
P D + 150 C o * 60 C
Room Ambient 25 _ C
T J(max) * T A
P D +
o o
400 C W
P D + 312 mW
Elevated Ambient 60 _ C
T J(max) * T A
P D +
o o
400 C W
P D + 225 mW
400
300
200
Dual EVB
NOTE: Although they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.2 W.
100
0
1” Square FR4 PCB
Testing
10 -5 10 -4
10 -3
10 -2 10 -1
Time (Secs)
1
10
100
1000
To aid comparison further, Figure 2 illustrates the dual-channel
SC-70 thermal performance on two different board sizes and
two different pad patterns. The results display the thermal
performance out to steady state. The measured steady state
values of R θ JA for the dual 6-pin SC-70 are as follows:
LITTLE FOOT SC-70 (6-PIN )
FIGURE 2. Comparison of Dual SC70-6 on EVB and 1”
Square FR4 PCB.
The results show that if the board area can be increased and
maximum copper traces are added, the thermal resistance
reduction is limited to 20%. This fact confirms that the power
dissipation is restricted with the package size and the Alloy 42
leadframe.
1) Minimum recommended pad pattern (see
Figure 2) on the EVB of 0.5 inches x
0.6 inches.
2) Industry standard 1” square PCB with
maximum copper both sides.
www.vishay.com
2
518 _ C/W
413 _ C/W
ASSOCIATED DOCUMENT
Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper
Leadframe Version, REcommended Pad Pattern and Thermal
Performance, AN815, (http://www.vishay.com/doc?71334) .
Document Number: 71237
12-Dec-03
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI1967DH-T1-E3 MOSFET 2P-CH 20V 1.3A SC70-6
SI1970DH-T1-GE3 MOSFET N-CH DUAL 30V SC70-6
SI2300DS-T1-GE3 MOSFET N-CH 30V SOT-23
SI2302CDS-T1-GE3 MOSFET N-CH 20V 2.6A SOT23-3
SI2303BDS-T1-GE3 MOSFET P-CH 30V 1.49A SOT23-3
SI2304BDS-T1-GE3 MOSFET N-CH 30V 2.6A SOT23-3
SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.6A SOT23
SI2305ADS-T1-E3 MOSFET P-CH 8V 5.4A SOT23-3
相关代理商/技术参数
SI1926DL-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET 2P-CH 60V 340MA SOT363 制造商:Vishay Intertechnologies 功能描述:DUAL N-CH 60-V(D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET
SI1958DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET
SI1958DH_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20 V (D-S) MOSFET
SI1958DH-T1-E3 功能描述:MOSFET DUAL N-CH 20V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1965DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET
SI1965DH-T1-E3 功能描述:MOSFET 12V 1.3A 1.25W 390mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1965DH-T1-GE3 功能描述:MOSFET 12V 1.3A 1.25W 390mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1967DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET